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Session 1. Chairman - Alexander L. Aseev
Date:
Tuesday, 23 October
Time:
10:00-11:45
Place:
Small House of Scientists , Novosibirsk
10:00 - 10:15
Opening ceremony. Introductory speech by Alexander L. Aseev, ISP SB RAS Director, SB RAS Chairman.
Invited reports
10:15 - 10:45
V.N.Mordkovich
Reactions assisted semiconductors
Institute of the Problems of Microelectronics Technology and Ultra-Pure Materials, RAS, Chernogolovka
10:45 - 11:15
A.V.Dvurechenskii
Ion-induced molecular-beam epitaxy. Impulse annealing of nanostructures
A.V.Rzhanov Institute of Semiconductor Physics, SB RAS, Novosibirsk
11:15 - 11:45
A.L.Aseev,
A.V.Latyshev
Electron and ion lithography: nanostructuring
A.V.Rzhanov Institute of Semiconductor Physics, SB RAS, Novosibirsk