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Session 13. Chairman - A.V. Dvurechenskii
Date:Friday, 26 October
Time:14:30-16:15
Place: Small House of Scientists , Novosibirsk
Invited report
14:30 - 15:00
Julian Duchaine
, Frank Torregrosa, Yohann Spiegel
Challenges and use of plasma immersion ion implantation for advanced semiconductor devices
IBS, Peynier, France
15:00 - 15:15
S.P.Kobeleva1, I.M.Anfimov1, A.M.Musalitin1, V.V.Kalinin2, K.V.Fritzler2
Influence of technological prehistory on thermoacceptors formation in silicon crucibleless zone melting CZM) radiated by relativistic electrons
1National research technological University, Moscow
2A.V.Rzhanov Institute of Semiconductor Physics, SB RAS, Novosibirsk
15:15 - 15:30
A.A.Korepanov
, V.V.Bolotov, K.E.Ivlev, P.M.Korusenko, D.V.Cheredov
Structural and electrophysical properties of por-Si/SnOx, nanocomposite obtained with the impact of a powerful nanosecond laser beam
Omsk Affiliated Branch of A.V.Rzhanov Institute of Semiconductor Physics, SB RAS, Omsk
15:30 - 15:45
S.E.Demyanov,  E.Yu.Kanyukov
Ion-track technology to create nanostructured sensors of magnetic field
SPC of the Belarus NAS on Material Science, Minsk
15:45 - 16:00
A.V.Stepanov
, G.M.Filippov
Simulation of particles channeling in carbon nanotube arrays
1.Ya.Yakovlev Chuvash State Pedagogical University
2Cheboksary Polytechnical Institute (affiliated branch) of the Moscow State Open University, Cheboksary
16:00 - 16:15
M.I.Makoviychuk
Flicker-noise spectroscopy - a perspective analytical investigation method for ion-doped semiconductor layers
Yaroslavl Affiliated Branch of the Physico-Technological Institute, RAS, Yaroslavl