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Session 10. Chairman - V.V.Kozlovsky
Date:Thursday, 25 October
Time:11:15-13:30
Place: Small House of Scientists , Novosibirsk
Invited reports
11:15 - 11:45
N.N.Gerasimenko
Ion synthesis of silicon-based nanostructures
National Research University "MIET", Moscow, Zelenograd
11:45 - 12:15F.F.Komarov
Ion synthesis of narrow-band �35 semiconductor nanocrystals in silicon and silicon dioxide
A.N.Sevchenko Institute of Applied Physical Problems of BSU, Minsk
12:15 - 12:45
V.P.Popov1, L.N.Safronov1, V.A.Antonov1, A.K.Gutakovsky1, V.I.Obodnikov1, S.N.Podlesny1, I.A.Kartashev1, A.V.Shishaev1, I.I.Ryabtsev1, I.N.Kupriyanov2, A.A.Kalinin2, Yu.N.Palyanov2, S.Rubanov3
Diamond structures for optoelectronics and quantum computer programing: ion implantation and annealing under pressure
1A.V.Rzhanov Institute of Semiconductor Physics, SB RAS, Novosibirsk
2V.S .Sobolev Institute of Geology and Mineralogy, Novosibirsk
3Bioinstitue of the University of Melbourne, Melbourne
12:45 - 13:00
R.A.Hmelnitsky
, V.A.Dravin, A.A.Tal, M.I.Latushko, A.A.Homich, A.V.Homich, A.S.Trushin, A.A.Alekseev, S.A.Terentyev
Swelling and amorphization of diamond at ion implantation
P.N.Lebedev Physical Institute, RAS, Moscow
Invited report
13:00 - 13:30
Paul F.A.Alkemade
Sub-Nanometer Focused Helium Ion Beam for Structuring Materials on the Nanoscale
Kavli Institute of Nanoscience, Delft University of Technology, Delft, The Netherlands