Лаборатория физических основ материаловедения кремния

ПУБЛИКАЦИИ



2012

Статьи в рецензируемых журналах

  1. D.R. Islamov, V.A. Gritsenko, C.H. Cheng, A. Chin, Bipolar conductivity in nanocrystallized TiO2, Appl. Phys. Lett. 101, 032101 (2012).
  2. A.S. Shaposhnikov, T.V. Perevalov, V.A. Gritsenko, C.H. Cheng, A. Chin, Mechanism of GeO2 resistive switching based on the multi-phonon assisted tunneling between traps, Appl. Phys. Lett. 100, 243506 (2012).
  3. O V Naumova, B I Fomin, M A Ilnitsky and V P Popov. Charge accumulation in the buried oxide of SOI structures with the bonded Si/SiO2 interface under γ-irradiation: effect of preliminary ion implantation. Semicond. Sci. Technol. 2012, v. 27, p. 065014 doi:10.1088/0268-1242/27/6/065014.
  4. V.P. Popov, L.N. Safronov, O.V. Naumova, D.V. Nikolaev, I.V. Kupriyanov, Yu.N. Palyanov. Conductive layers in diamond formed by hydrogen ion implantation and annealing. Nucl. Instrum. and Meth. in Phys. Res. B, 2012, v. 282, p. 100-107. DOI information: 10.1016/j.nimb.2011.08.050.
  5. В.П. Попов, Л.Н. Сафронов, О.В. Наумова, В.А. Володин, И.Н. Куприянов, Ю.Н. Пальянов, Формирование проводящих слоев внутри алмаза имплантацией ионов водорода и последующих термообработках при низком или высоком давлении, Известия РАН, Серия физическая, 2012, т. 76, № 5, с. 647–652. // V.P. Popov, L.N. Safronov, O.V. Naumova, V.A. Volodin, I.N. Kupriyanov, Yu.N. Pal’yanov, Formation of Conductive Layers inside Diamond by Hydrogen Ion Implantation and Subsequent Thermal Treatment at Low or High Pressures. Bulletin of the Russian Academy of Sciences. Physics, 2012, Vol. 76, No. 5, pp. 577–581.
  6. Naumova O.V., Fomin B.I., Malyarenko N.F., Popov V.P. Modification and characterization of the surface of SOI nanowire sensors.- J. NanoRes., 2012, v. 18-19, p. 139-147.
  7. V.N. Popok, J. Samela, K. Nordlund, V.P. Popov, "Impact of keV-energy argon clusters on diamond and graphite", Nuclear Instruments and Methods in Physical Research B, 282 (2012) p. 112-115; doi:10.1016/j.nimb.2011.08.055.
  8. V.P. Popov, V.A. Antonov, L.N. Safronov, I.N. Kupriyanov, Yu.N. Pal’yanov, S. Rubanov. Fabrication of Ultra-Thin Diamond Films Using Hydrogen Implantation and Lift-off Technique // AIP Proceedings, 2012, v. 1496, p. 261-264.
  9. V.N. Popok, J. Samela, K. Nordlund, V.P. Popov, "Implantation of keV-energy argon clusters and radiation damage in diamond", Phys. Rev. B, 2012, v. 85, p. 033405 (4).
  10. I.E. Tyschenko, V.A. Volodin, V.P. Popov. Radiative recombination in silicon-on-insulator layers implanted with high dose of H+ ions. Nucl. Instrum. Meth. Phys. Res. B. v. 282, 2012, pp. 73-75.
  11. I.E. Tyschenko, V. Volodin, A. Misiuk. Crystallization of hydrogenated amorphous-nanocrystalline silicon films under high-pressure annealing. Phys. Stat Sol., v. 9, N 6, 2012, pp. 1487-1489.
  12. И.Е. Тысченко, В.А. Володин. Квантово-размерный эффект в пленках кремния-на-изоляторе, имплантированных большими дозами ионов водорода. ФТП, т. 46, № 10, 2012, с. 1309-1313.
  13. A. Misiuk, J. Bak-Misiuk, A. Barcz, P. Romanowski, I. Tyschenko, A. Ulyashin, M. Prujszczyk. Out-diffusion of hydrogen from hydrogen plasma-processed oxygen-implanted silicon. Applied Surface Science, v. 260, 2012, pp. 54-58.
  14. G.A. Kachurin, S.G. Cherkova, D.V. Marin, V.G. Kesler, V.A. Volodin and V.A. Skuratov. Light-emitting Si nanostructures formed by swift heavy ions in stoichiometric SiO2 layers. Nucl. Instr. Meth. B, 2012, V. 282, p. 68-72.
  15. Venu Mankad, Sanjeev K. Gupta, Prafulla K. Jha, N. N. Ovysuk, and G. A. Kachurin. Low-frequency Raman scattering from Si/Ge nanocrystals in different matrixes caused by acoustic phonon quantization. Journal оf Applied Physics 112, 054318 (2012).