2012


N.N. Mikhailov, S.A. Dvoretsky, E.B. Olshanetsky, I.O. Parm, Z.D. Kvon, A.V. Germanenko, G.M. Minkov, O.E. Rut, A.A. Sherstobitov, E.G. Novik, G.M. Gusev, A.D. Levin, O.E. Raichev, J.C. Portal, S.V. Morozov, M.S. Joludev, A.V. Antonov, V.V. Rumyantsev, V.I. Gavrilenko, V.Ya. Aleshkin, A.A.Dubinov, O. Drachenko, S. Winnerl, H. Schneider, M. Helm
Laboratory of Epitaxial Technology from Molecular Beams of A2B6 compounds.
Laboratory for Ellipsometry of Semiconductor Materials and Structures.
Laboratory of Physics and Technology of A3B5 Semiconductor Structures.
Institute of Physics and Applied Mathematics of Ural State University, Ekaterinburg.
Institute of Semiconductor Physics, Ukraine.
Instituto de Física da Universidade de São Paulo, Brazil.
LNCMI-CNRS, Grenoble, France.
INSA Toulouse, France.
Institut Universitaire de France, Paris, France.
T.I. Baturina, N.M. Chtchelkatchev, A.A. Golubov, and V.M. Vinokur
Laboratory of Physics and Technology of A3B5 Semiconductor Structures.
Moscow Institute of Physics and Technology, Department of Theoretical Physics.
Faculty of Science and Technology, and MESA+ Institute of Nanotechnology, University of Twente, Enschede, The Netherlands.
Argonne National Laboratory, USA.
O.E. Tereshchenko, K.A. Kokh, V.A. Golyashov, S.V. Makarenko, K.N. Romanyuk, I.P. Prosvirin, A.S. Kozhukhov, D.V. Sheglov, S.V. Eremeev, S.D. Borisova and E.V. Chulkov, K. Miyamoto, A. Kimura, T. Okuda
Laboratory of Molecular Beam Epitaxy of A3B5 Semiconductor Compounds.
V.S. Sobolev Institute of Geology and Mineralogy.
Novosibirsk State University.
Institute of Strength Physics and Materials Science, Tomsk.
Tomsk State University.
Hiroshima Synchrotron Radiation Center, Hiroshima University, Japan.
A.A. Bykov, D.V. Dmitriev, I.V. Marchishin, S. Byrnes and S.A. Vitkalov
Laboratory of Physics and Technology of A3B5 Semiconductor Structures.
Laboratory of Molecular Beam Epitaxy of A3B5 Semiconductor Compounds.
City College of the City University of New York, Physics Department.
Z.D. Kvon, D.A. Kozlov, A.K. Bakarov, D.V. Dmitriev, A.I. Toropov
Laboratory of Physics and Technology of A3B5 Semiconductor Structures.
Laboratory of Molecular-Beam Epitaxy of A3B5 Semiconductor Compounds.
A.I. Yakimov, V.A. Timofeev, A.A. Bloshkin, A.I. Nikiforov, V.V. Kirienko, A.V. Dvurechenskii
Laboratory of Nonequilibrium Semiconductor Systems.
Laboratory of Molecular-Beam Epitaxy of Elementary Semiconductors and A3B5 Systems.
R.Z.Vitlina, L.I.Magarill, and A.V.Chaplik
Laboratory of Theoretical Physics.
M.M. Mahmoodian and M.V. Entin
Laboratory of Theoretical Physics.
V.A. Gritsenko, T.V. Perevalov, V.Sh. Aliev
Laboratory of Silicon Material Science.
V.A. Gaisler, A.I. Toropov, A.K. Bakarov, A.K. Kalagin, I.A. Derebezov, A.S. Jaroshevich, D.V. Shcheglov, A.V. Gaisler, A.V. Latyshev
Laboratory of Nanodiagnostics and Nanolithography.
Laboratory of Molecular Beam Epitaxy of A3B5 Semiconductor Compounds.
I. E. Tyschenko, V. A. Volodin, V. P. Popov
Laboratory of Silicon Materials Science.
Laboratory of Nonequilibrium Semiconductor Systems.
V.G. Kesler, A.A. Guzev, E.R. Zakirov, Z.V. Panova, A.V. Tsarenko, A.P. Kovchavtsev, G.L Kuryshev
Laboratory of Physical Bases of Integral Microelectronics.
S.G. Cherkova, V.A. Volodin, G.N. Kamaev, A.Kh. Antonenko, D.V. Marin, G.A. Kachurin, A.G. Cherkov, V.A. Skuratov
Laboratory of Nonequilibrium Semiconductor Systems.
Laboratory of Silicon Material Science.
Laboratory of Nanodiagnostics and Nanolithograph.
Joint Institute for Nuclear Research, Dubna.
O.V. Naumova, B.I. Fomin, D.A. Nasimov, N.F. Malyarenko, V.P. Popov
Laboratory of Silicon Materials Physical Bases.
Laboratory of Silicon Microelectronics Technology.
Laboratory of Nanodiagnostics and Nanolithography.
V.Sh. Aliev, S.G. Bortnikov, M.A. Demyanenko
Laboratory of Kinetic Phenomena in Semiconductors.
T.V. Malin, A.M. Gilinsky, V.G. Mansurov, D.Yu. Protasov, A.K. Shestakov, K.S. Zhuravlev
Laboratory of Molecular Beam Epitaxy of A3B5 Semiconductor Compounds.
V.V. Atuchin, S.V. Adichtchev, B.G. Bazarov, J.G. Bazarova, T.A. Gavrilova, V.G. Grossman, V.G. Kesler, Z.S. Lin, M.S. Molokeev, N.V. Surovtsev
Laboratory of Optical Materials and Structures.
Laboratory of Nanodiagnostics and Nanolithography.
Laboratory of Physical Basis for Integrated Microelectronics.
Institute of Automatics and Electrometry, SB RAS, Novosibirsk, Russia.
Baikal Institute of Nature Management, SB RAS, Ulan-Ude, Russia.
Institute of Physics, SB RAS, Krasnoyarsk, Russia.
Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, China.
B.R. Semyagin, M.A. Putyatov, D.F. Feklin, E.M. Emelyanov, A.V. Vasev, A.P. Vasilenko, V. V. Preobrazhenskii
Laboratory of Molecular Beam Epitaxy of Elementary Semiconductors and A3B5 Compounds.
O.P. Pchelyakov, A.K. Gutakovsky, N.A. Pakhanov
Laboratory of Molecular Beam Epitaxy of Elementary Semiconductors and A3B5 Compounds.
M.V. Yakushev, I.V. Sabinina, A.V. Predein, V.V. Vasil'ev, N.N. Mikhailov, V.S. Varavin, Yu.G.Sidorov, V.A. Shvets, S.A. Dvoretsky, A.L. Aseev
Laboratory of Epitaxial Technology from Molecular Beams of A2B6 compounds. Laboratory for Physical-Technological Principles of Making A2B6-based devices.
V. A. Zinovyev, A. V. Dvurechenskii, P.A. Kuchinskaya, V.A. Armbrister, S. A. Teys
Laboratory of Nonequilibrium Semiconductor Systems. Laboratory of Molecular-Beam Epitaxy of Elementary Semiconductors and A3B5 Compounds.
Zh.V. Smagina, A.V. Dvurechenskii, N.P. Stepina, V.A. Armbrister, P.A. Kuchinskaya, V.A. Seleznev, E.E. Rodyakina
Laboratory of Non-Equilibrium Semiconductor Systems.
Laboratory of Physics and Technology of Three-Dimensional Nanostructures.
Laboratory of Nanodiagnostics and Nanolithography.
I.O. Akhundov, V.L. Alperovich, A.V. Latyshev, A.S. Terekhov
Laboratory of Nonequilibrium Processes in Semiconductors.
Laboratory of Nanodiagnostics and Nanolithography.
S.V.Sitnikov, S.S. Kosolobov, A.V. Latyshev
Laboratory of Nanolithography and Nanodiagnostics.
E.E. Rodyakina, A.V. Latyshev
Laboratory of Nanodiagnostics and Nanolithography.
A.G. Milekhin, N.A. Yeryukov, L.L. Sveshnikova, T.A. Duda
Laboratory of Physical Chemistry of Semiconductor Surface and Semiconductor - Dielectric Systems.
A.K. Bakarov, K.S. Zhuravlev, A.K.Shestakov and A.I.Toropov
Laboratory of Molecular-Beam Epitaxy of A3B5 Semiconductor Compounds.
A.N. Akimov, D.V. Istchenko, A.E. Klimov, N.S. Pastchin, V.N. Sherstyakova, V.N. Shumsky
Laboratory of Heterostructures Physics and Technology.
I.A. Kotin, I.V. Antonova, A.I. Komonov, R.A. Soots, V.A. Seleznev, and V.Ya. Prinz
Laboratory of Physics and Technology of Three-Dimensional Nanostructures.
A.V. Tsarev
Laboratory of Optical Materials and Structures. The work was carried out with the participation of the Polytechnic University of Bari, Italy.
V.M.Entin, E.A.Yakshina, D.B.Tretyakov, I.I.Beterov, I.I.Ryabtsev
Laboratory of Nonlinear Resonant Processes and Laser Diagnostics.
E.B. Khvorostov, V.G. Gol'dort, V.N. Ishchenko, S.A. Kochubei, N.N. Rubtsova, V.A Reshetov
Laboratory of Laser Spectroscopy and Laser Technologies.
P.A. Bokhan, Dm.E. Zakrevsky
Laboratory of Power Gas Lasers.
V.G. Khoroshevsky, K.V. Pavsky, M.G. Kurnosov, S.N. Mamoilenko, A.Y. Polyakov, A.V. Efimov, A.A. Paznikov
Computer Systems Laboratory.