| Nitrogen atoms and vacancies in diamond: Detection and emission of high-frequency microwave radiation |
| Joerg Debus |
| TU Dortmund University, Dortmund, Germany |
|
| Bloch and Wannier-Stak Thz supperlattice radiations in the positive static differential conductivity region |
| A.A.Andronov, A.V. Ikonnikov, K.V.Maremyanin, Yu.N.Nozdrin, V.I. Pozdnyakova1, A.A.Padalitsa, M.A.Ladugin2, V.A.Belyakobv, I.V.Ladenkov, G. Fefelov3 |
1RAS Institute of Microstructures Physics, Nizhny Novgorod,
2Sigma-Plus, Moscow,
3OJSC “Salute”, Nizhny Novgorod |
|
| Electromagnetic materials based on resonance nanoparticles |
| M.Yu. Barabenkov1,2, Yu.N. Barabenkov3 |
1RAS Institute of Problems of Microelectronics Technology and High-Purity Materials, Chernogolovka,
2JSC “Research Institute of Molecular Electronics”, Moscow, Zelenograd;
3FSBIS “RAS V.A.Kotelnikov Institute of Radiotechnics and Electronics” |
|
| Narrow-band semiconductor-based THz lasers |
| V.I.Gavrilenko |
| RAS Institute of Microstructures Physics, Nizhny Novgorod |
|
| Controlling the mode structure of laser resonators and microresonators |
| A.E.Zhukov1, N.V.Kryzhanovskaya1, N.Yu.Gordeev1,2, A.V.Savelyev1, V.V.Korneev1, Yu.S.Polubavkina1, E.I.Moiseev1, M.V.Maksimov1,2, F.I.Zubov1 |
1Saint-Petersburg Academic University, St.-P,
2A.F.Ioffe Physico-Technical Institute, Saint-Petersburg |
|
| Injection laser converters of visible range 530-590 nm based on А2В6 semiconductor structures |
| S.V.Ivanov1, S.V.Sorokin1, A.G.Vainilovich2, E.V.Lutsenko2 |
1A.F.Ioffee PTI, Saint-Petersburg,
2B.I.Stepanov Institute of Physics, NAS of Belarus, Belarus |
|
| Lasers of mid-IR range based on ZnSe: Fe2+crystals |
| V.P.Kalinushkin1, N.N.Ilichev1, E.M.Gavrishchuk2, A.A.Gladilin1 |
1RAS A.M.Prokhorov Institute of General Physics, Moscow,
2RAS G.G.Devyatyh Institute of High-Purity Substances, Nizhny Novgorod |
|
| Effects of combination light scattering plasmon amplification and IR absorption by semiconductor nanocrystals |
| A.G.Milekhin1,2, L.L.Sveshnikova1, T.A.Duda1, E.E.Rodyakina1,2, S.A.Kuznetsov2, I.A.Milekhin1,2, A.V.Latyshev1,2, V.M. Dzhagan3, D.R.T. Zahn |
1A.V.Rzhanov Institute of Semiconductor Physics, Novosibirsk,
2Novosibirsk State University,
3Chemnitz University of Technology, Germany |
|
| Experimental quantum cryptography with single photons |
| I.I.Ryabtsev1,2, D.B.Tretyakov1,2, A.V.Kolyako1,2,3, A.S.Pleshkov1,2,4, V.M.Entin1,2, I.G.Neizvestny1,5 |
1SB RAS A.V.Rzhanov Institute of Semiconductor Physics, Novosibirsk,
2Novosibirsk State University, Novosibirsk,
3SB RAS Institute of Laser Physics, Novosibirsk,
4SB RAS Institute of Automatics and Electrometry, Novosibirsk,
5Novosibirsk State Technical University, Novosibirsk |
|
| Ge/Si heterostructures with Ge quantum dots for mid-IR range photodetectors |
| A.I.Yakimov |
| SB RAS A.V.Rzhanov Institute of Semiconductor Physics, Novosibirsk |
|
| Heteroepitaxial CdHgTe structures grown with the method of molecular-beam epitaxy on Si(013) substrates for perspective IR PDs |
| M.V.Yakushev, V.S.Varavin, V.V.Vasilyev, S.A.Dvoretsky, A.V.Latyshev, D.V.Marin, V.G.Remesnik, I.V.Sabinina, G.Yu.Sidorov, Yu.G.Sidorov |
| SB RAS A.V.Rzhanov Institute of Semiconductor Physics, Novosibirsk |