Institute of Semiconductor Physics SB RAS

[Лабораторно-технический корпус ИФП СО РАН]

	Institute
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ISP SB RAS (Novosibirsk) was founded in 1964 in Academgorodok.

Total staff: about 800 people (including over 33 Doctors of Sciences, 146 Candidates of Sciences).

22 Laboratories and 8 Sectors in the leading research institute, 6 laboratories and one sector in Omsk Branch. [details]


Semiconductor Physics; Physical and chemical bases for micro-, nanoelectronics, microphotoelectronicss and acoustoelectronics; Optics, Quantum electronics.

Library:

publications and books

journals

Phone book

2007, 2006, 2005, 2004

Bulk semiconductors: Si, GaAs, InAs

Quantum structures: Ge/Si, AlAs/GaAs, GaAlAs/InAlAs/GaAs, GaN/GaAs

Heterostructures, multilayer structures: Si/Ge, GaAlAs/InAlAs/GaAs, GaN, AlN, InN, InP, CdTe/ZnTe, CdHgTe/CdTe/GaAs, SOI

First International Forum on Nanotechnologies

19.01.09

The first international forum on nanotechnologies was being held in the Moscow Exhibitional Centre (Expocentre) from the 3d to the 5th of December, 2008...[read more]

SIBPOLYTECH 2008

25.12.08

Our Institute was awarded the golden medal for the elaboration of a series of homelend molecular-beam epitaxial devices for nanoelectron technologies...[read more]

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