ПУБЛИКАЦИИ

2000



Опубликованные статьи

  1. Орлов Д.А., Андреев В.Э., Терехов А.С. Упругое и неупругое туннелирование фотоэлектронов из зоны размерного квантования на границе раздела p+-GaAs-(Cs,O) - вакуум. Письма ЖЭТФ, 2000, т. 71, №. 4, с. 220.
  2. V.L. Alperovich, Yu.B. Bolkhovityanov, S.I. Chikichev, A.S. Jaroshevich, A.G. Paulish and A.S. Terekhov. Strained pseudomorphic InGaAsP/GaAs layers: epitaxial growth, electronic properties and photocathode applications. In: "InP and related compounds" ed. by M.O. Manasreh, Gordon and Breach Science Publishers, 2000, p. 651-726.

Статьи, отосланные в печать

  1. Alperovich V.L., Tereshchenko O.E., Litvinov A.N., Terekhov A.S. Evolution of interface excitations under phase transition in two-dimensional layer of Cs on GaAs(100) and (111). Appl. Surf. Sci., (accepted for publication).
  2. Pastuszka S., Hoppe M., Kratzmann D., Schwalm D., Wolf A., Jaroshevich A.S., Kosolobov S.N., Orlov D.A., Terekhov A.S. Preparation and performance of transmission-mode GaAs-photocathodes as sources for cold dc electron beams. J. Appl. Phys. 2000 (accepted for publication).

Тезисы докладов

  1. D.A.Orlov, M.Hoppe, U.Weigel, D.Schwalm, A.S.Terekhov, A.Wolf. Longitudinal and transverse energy distributions of electrons emitted from GaAs(Cs,O). Abstracts of the PES2000 Workshop, Nagoya, Japan.
  2. Alperovich V.L., Tereshchenko O.E., Litvinov A.N., Terekhov A.S. Evolution of interface excitations under phase transition in two-dimensional layer of Cs on GaAs. Abstracts of 10th International Conference on Solid Films and Surfaces (ICSFS-10), July 9-13, 2000, Princeton, USA, Mo-B-1500.
  3. Tereshchenko O.E., Daineka D.V., Paget D. Nonmetal-metal and disorder-order phase transitions at ultrathin alkali metal/GaAs(100) interfaces. Abstracts of 10th International Conference on Solid Films and Surfaces (ICSFS-10), July 9-13, 2000, Princeton, USA, Mo-B-1440.