Лаборатория физических основ эпитаксии полупроводниковых гетероструктур

СОТРУДНИКИ

Семягин Борис Рэмович

старший научный сотрудник, к.ф.-м.н.

тел. 333-19-67, вн. 1602

201, 221 ЛТК

e-mail:

Область научных интересов:

  • молекулярно-лучевая эпитаксия,

  • полупроводниковые соединения AIIIBV,

  • дифракция быстрых электронов,

  • гетероструктуры,

  • эпитаксиальный рост GaAs при низких температурах,

  • фотоприемники.

Образование: высшее.

В 1988 г. Окончил Новосибирский электротехнический институт по специальности «физическая электроника».

В 2003 г. защитил кандидатскую диссертацию на тему «Рост и легирование GaAs(001) при низкотемпературной молекулярно-лучевой эпитаксии» по специальности 01.04.07 «Физика конденсированного состояния».

Трудовая деятельность:

  • 1988 – 1996 – инженер-технолог, «ИФП СОРАН», г. Новосибирск.

  • 1996 – 2003 - научный сотрудник, «ИФП СОРАН», г. Новосибирск.

  • 2003 – н/в - старший научный сотрудник, «ИФП СОРАН», г. Новосибирск.

Основное место работы: ИФП, лаб. 17.

Избранные публикации:

С 1988 по 2014 г. опубликовано 119 научных статей в отечественных и международных журналах. Среди опубликованных:
  1. Prints V.Ya., Panaev I.A., V.V.Preobrazhenskii, B.R.Semjagin. High-temperature anisotropy of the conductivity of superlattices of GaAs quantum wires grown on faceted (311)A surfaces.-JETP Lett., Vol.60, No. 3, 10 August 1994, pp. 217-220.
  2. Pusep Yu. A., da Silwa S. W., Galserani J., C., Milekhin A.G., Marahovka I.I., Preobrazhenskii V.V., Semjagin B.R. Spectroscopy of the vibrational modes in GaAs/AlGaAs heterostructures with monolayer wide AlGaAs barriers. Physical Reviev B, 1995, vol. 52, N 4, pp.2610-2618.
  3. da Silva S.W., Pusep Yu.A., Galzerani J.C., Lubyshev D.I., Milekhin A.G., Preobrazhenskii V.V., Putiato M.A., and Semjagin B.R. Optical phonon spectra of GaSb/AlSb superlattices: influence of strain and interface roughnesses. J.Appl.Phys. 80 (1),1 July 1996, pp. 1-3.
  4. N.A.Bert, V.V.Chaldyshev, N.N.Faleev, A.E.Kunitsyn, Lubyshev D.I., V.V.Preobrazhenskii, B.R.Semjagin, and V.V.Tret`ykov "Two-dimensional precipitation of As clusters due to indium delta-doping of GaAs films grown by molecular beam epitaxy at low temperature" Semicod. Sci. Technol. 12 (1997) 51-54.
  5. Bert N.A., Chaldyshev V.V., Kunitsyn A.E., Musikhin Yu. G., Faleev N.N., Tretjakov V.V., Preobrazhenskii V.V., Putjato M.A., Semjagin B.R. Enhanced arsenic excess in low-temperature grown GaAs due to indium doping. Apll. Phys. Lett. v.70, 9 June 1997 pp.3146-3148.
  6. Milekhin A., Werninghaus T., Zahn D.R.T., Yanovskii Yu., Semyagin B., Gutakovskii A. Raman and infrared spectroscopical investigation of the optical vibrational models in GaSb/AlSb superlattices. - European Physical Journal B 1998, N6, p.295-299.
  7. P.N. Brounkov, V.V. Chaldyshev, A.V. Chernigovskii, A.A. Suvorova, N.A. Bert, S.G. Konnikov, V.V. Preobrazhenskii, M.A. Putyato, B.R. Semyagin. Bistability of charge accumulated in low-temperature grown GaAs. Appl. Phys. Lett., 79,№19,2796-2798 (1998).
  8. Preobrazhenskii V.V., Putyato M.A., Pchelyakov O.P., Semyagin B.R. Experimental determination of the incorporation factorof As4 during molecular beam epitaxy of GaAs. –J. Cryst. Growth, V.201/202, 1999, p.170-173.
  9. Preobrazhenskii V.V., Putyato M.A., Pchelyakov O.P., Semyagin B.R. Surface structure transitions on (001) GaAs during MBE.–J. Cryst. Growth, V.201/202, 1999, p.166-169.
  10. Chaldyshev V.V., Faleev N.N., Bert N.A., Musikhin Yu.G., Kunitsyn A.E., Preobrazhenskii V.V., Putyato M.A., Semyagin B.R., And Werner P. Ordered Arrays of Arsenic Clusters Coincided With InAs/GaAs Superlattices Grown By Low-Temperature MBE. -J. Cryst. Growth, V.201/202, 1999, p.260-262.
  11. N.A. Bert, V.V. Chaldyshev, A.A. Suvorova, V.V. Preobrazhenskii, M.A. Putyato, B.R. Semyagin, P. Werner Enhanced precipitation of excess As on antimony delta layers in low-temperature-grown GaAs. - Appl. Phys. Lett. V. 74, N.11, 15 March 1999, pp.1588-1590.
  12. N.A. Bert, V.V. Chaldyshev, Yu.G. Musikhin, A.A. Suvorova, V.V. Preobrazhenskii, M.A. Putyato, B.R. Semyagin, P. Werner In-Ga intermixing in low-temperature grown GaAs delta doped with In. - Appl. Phys. Lett. V. 74, N.10, 8 March 1999, pp.1442-1444.
  13. N.N. Ledentsov, D. Litvinov, A. Rosenauer, D. Gerthsen, I.P. Soshnikov, V.A. Shchukin, V.M. Ustinov, A.Yu. Egorov, A.E. Zhukov, V.A. Volodin, M.D. Efremov, V.V. Preobrazhenskii, B.R. Semyagin, D. Bimberg, Zh.I. Alferov Interface structure and growth mode of quantum wire and quantum dot GaAs-AlAs structures on corrugated (311)A surface. - Journal of Electronic Materials 30(5) (2001) pp. 463-470.
  14. V.V. Chaldyshev, N.A. Bert, Yu.G. Musikhin, A.A. Suvorova, V.V. Preobrazhenskii, M.A. Putyato, B.R. Semyagin, P. Werner and U. Gősele, Enhanced As–Sb intermixing of GaSb monolayer superlattices in low-temperature grown GaAs. Appl. Phys. Lett., 79, N. 9, 1294-1296 (2001).
  15. D. A. Vasyukov, M. V. Baidakova, V. V. Chaldyshev, A. A. Suvorova, V. V. Preobrazhenskii, M. A. Putyato, B.R. Semyagin, Structural transformations in low-temperature grown GaAs:Sb. J. Phys. D: Appl. Phys. 2001 V. 34, N. 10A, P. A15-A18.
  16. V.A.Volodin, M.D.Efremov, V.A.Sachcov, V.V.Preobrazhenski, B.R.Semyagin, E.A.Galaktionov, D.A.Orehov. Raman study of phonon-plasmon coupling modes in tunnelling GaAs/AlAs SLs, grown on (311) and (001) surfaces. – Nanotechnology 12(2001) pp. 508-511.
  17. V. V. Chaldyshev, N. A. Bert, A. E. Romanov, A. A. Suvorova, A. L. Kolesnikova, V. V. Preobrazhenskii, M. A. Putyato, and B. R. Semyagin, P. Werner, N. D. Zakharov, A. Claverie, Local stresses induced by nanoscale As–Sb clusters in GaAs matrix. - Appl. Phys. Lett. V. 80, No. 3, 21 January 2002 pp. 377-379.
  18. D. Litvinov, A. Rosenauer, D. Gerthsen N. N. Ledentsov, D. Bimberg, G. A. Ljubas, V. V. Bolotov, V. A. Volodin, M. D. Efremov, V. V. Preobrazhenskii, B. R. Semyagin, I. P. Soshnikov, Ordered arrays of vertically correlated GaAs and AlAs quantum wires grown on a GaAs(311)A surface. – Appl. Phys. Lett. V. 81, No. 6, 5 August 2002, pp. 1080-1082.
  19. M. A. Putyato, V. V. Preobrazhenskii, B. R. Semyagin, Yu. B. Bolkhovityanov, A. M. Gilinsky, A. K. Gutakousky, M. A. Revenko, O. P. Pchelyakov and D. F. Feklin - InGaAsP/InGaP superlattices by conventional MBE with molten metal solution phosphorus source. – J. Cryst. Growth, V. 247, No. 1-2, January 2003, pp. 23-27.
  20. A.Vorob`ev, V. Prinz, V. Preobrazhenskii, B. Semyagin – Free-standing InAs/InGaAs microtubes and microspirals on InAs(100). – Jpn. J. Appl. Phys. V. 42. Part 2, No. 1A/B, 15 January 2003, pp. L1-L3.
  21. M. A. Putyato, V. V. Preobrazhenskii, B. R. Semyagin, Yu. B. Bolkhovityanov, A. M. Gilinsky, A. K. Gutakousky, M. A. Revenko, O. P. Pchelyakov and D. F. Feklin - InGaAsP/InGaP superlattices by conventional MBE with molten metal solution phosphorus source. – J. Cryst. Growth, V. 247, No. 1-2, January 2003, pp. 23-27.
  22. M.A. Putyato, Yu.B. Bolkhovityanov, S.I. Chikichev, D.F. Feklin, A.M. Gilinsky, A.K. Gutakousky, V.V. Preobrazhenskii, M.A. Revenko, B.R. Semyagin and K.D. Chtcherbatchev- InP decomposition phosphorus beam source for MBE: design, properties and superlattice growth. – Semicond. Sci. Technol., V. 18, 2003, pp. 417-422.
  23. N.A. Cherkashin, A.Claverie, C.Bonafos, V.V. Chaldyshev, N.A. Bert, V.V. Preobrazhenskii, M.A. Putyato, B.R. Semyagin, P. Werner - Influence of the initial supersaturation of solute atoms on the size of nanoparticles grown by an Ostwald ripening mechanism. J. Appl. Phys. 102, 023520 (2007).
  24. M.V. Baidakova, N.A. Bert, V.V. Chaldyshev, V.N. Nevedomsky, M.A. Yagovkina, V.V. Preobrazhenskii, M.A. Putyato and B.R. Semyagin - Structural study of low-temperature grown superlattices of GaAs with delta-layers of Sb and P. - Physica B: Condensed Matter, Vol. 404, No. 23-24 (2009) 4970-4973.
  25. V.V. Chaldyshev, N.A. Bert, V.N. Nevedomsky, V.V. Preobrazhenskii, M. A. Putyato, and B.R. Semyagin, Self-organization of InAs and As quantum dots in GaAs by a combined molecular beam epitaxy process. – Phys. Status Solidi C6, No. 12(2009), 2698-2700.
  26. M.A. Putyato, V.V. Preobrazhenskii, B.R. Semyagin, D.F. Fёklin, N.A. Pakhanov, E.A. Emelianov, S.I. Chikiche - A valved cracking phosphorus beam source using InP thermal decomposition and its application to MBE growth. - Semicond. Sci. Technol. 24 (2009) 055014.
  27. Nataliya N. Rubtsova, Sergey A. Kochubei, Alexander A. Kovalyov, Valery V. Preobrazhenskii, Mikhael A. Putyato, Oleg P. Pchelyakov, Boris R. Semyagin, Timur S. Shamirzaev, Nikolay V. Kuleshov, Viktor E. Kisel, and Sergey V. Kurilchik, “Saturable absorbers based on semiconductor A3B5 nanostructures”, Solid State Lasers and Amplifiers IV, and High-Power Lasers 12-April-2010 Brussels, Belgium. Proc. SPIE Vol. 7721, 77210G-77210G-11 (May. 19, 2010).
  28. M.A. Putyato, B.R. Semyagin, E.A. Emel’yanov, N.A. Pakhanov, and V.V. Preobrazhenskii, Molecular-beam epitaxy of GaAs/Si(001) structures for high-performance tandem AIIIBV/Si-solar energy converters on an active silicon substrate. - Russian Physics Journal, Vol. 53, No. 9, 2011, p. 906-913.
  29. A.A. Kovalyov, V.V. Preobrazhenskii, M.A. Putyato, O.P. Pchelyakov, N.N. Rubtsova, B.R. Semyagin, V.E. Kisel, S.V. Kuril’chik, and N.V. Kuleshov. 115 fs pulses from Yb3+:KY(WO4)2 laser with low loss nanostructured saturable absorber. – Laser Phys. Lett. 8, No.6, 431–435 (2011).
  30. В.Н.Неведомский, Н.А.Берт, В.В.Чалдышев, В.В.Преображенский, М.А.Путято, Б.Р.Семягин «Электронная микроскопия структур GaAs с квантовыми точками InAs и As» - ФТП, 2011, том 45, выпуск 12, с. 1642 - 1645.
  31. D. S. Abramkin, M. A. Putyato, S. A. Budennyy, A. K. Gutakovskii, B. R. Semyagin, V. V. Preobrazhenskii, O. F. Kolomys, V. V. Strelchuk, T. S. Shamirzaev, Atomic structure and energy spectrum of Ga(As,P)/GaP heterostructures, J APPL PHYS, 2012, т. 112, №8, стр. 083713
  32. Д.С.Абрамкин, М.А.Путято, А.К.Гутаковский, Б.Р.Семягин, В.В.Преображенский, Т.С.Шамирзаев, Новая система самоорганизованных квантовых точек GaSb/GaP, Физика и техника полупроводников, 2012, т. 46, стр. 1571-1575.