РУКОВОДИТЕЛЬ

Валерий Владимирович Преображенский
к.ф.-м.н.

тел. (383) 333-32-86
222 ЛТК

e-mail

Окончил Новосибирский государственный университет в 1982 году по специальности физика.

С 1985 года сотрудник ИФП СО РАН на должностях инженера, старшего инженера, научного сотрудника, старшего научного сотрудника, с 2013 года заведующего лабораторией.

В 2000 году защитил кандидатскую диссертацию "Роль структуры поверхности при в формировании слоев GaAs и AlGaAs методом молекулярно-лучевой эпитаксии.

Область научных интересов:

  • молекулярно-лучевая эпитаксия гетероструктур на основе соединений AIIIBV, в том числе короткопериодных напряженных сверхрешеток GaSb/InAs, структур с квантовыми ямами и квантовыми точками, гетероструктур GaN/AlGaN;

  • GaAs, полученный методом МЛЭ при низкой температуре роста;

  • исследование процессов на поверхности роста при МЛЭ гетероструктур на основе соединений AIIIBV методом дифракции быстрых электронов на отражение;

  • МЛЭ соединений AIIIBV на подложках кремния.

Основные публикации (из более чем 150):

  1. Preobrazhenskii V.V., Putyato M.A., Pchelyakov O.P., Semyagin B.R. Experimental determination of the incorporation factorof As4 during molecular beam epitaxy of GaAs. –J. Cryst. Growth, V.201/202, 1999, p.170-173.
  2. Preobrazhenskii V.V., Putyato M.A., Pchelyakov O.P., Semyagin B.R. Surface structure transitions on (001) GaAs during MBE.–J. Cryst. Growth, V.201/202, 1999, p.166-169.
  3. Chaldyshev V.V., Faleev N.N., Bert N.A., Musikhin Yu.G., Kunitsyn A.E., Preobrazhenskii V.V., Putyato M.A., Semyagin B.R., And Werner P. Ordered Arrays of Arsenic Clusters Coincided With InAs/GaAs Superlattices Grown By Low-Temperature MBE. -J. Cryst. Growth, V.201/202, 1999, p.260-262.
  4. N.A. Bert, V.V. Chaldyshev, A.A. Suvorova, V.V. Preobrazhenskii, M.A. Putyato, B.R. Semyagin, P. Werner Enhanced precipitation of excess As on antimony delta layers in low-temperature-grown GaAs. - Appl. Phys. Lett. V. 74, N.11, 15 March 1999, pp.1588-1590.
  5. N.A. Bert, V.V. Chaldyshev, Yu.G. Musikhin, A.A. Suvorova, V.V. Preobrazhenskii, M.A. Putyato, B.R. Semyagin, P. Werner In-Ga intermixing in low-temperature grown GaAs delta doped with In. - Appl. Phys. Lett. V. 74, N.10, 8 March 1999, pp.1442-1444.
  6. V.Ya. Prinz, V.A. Seleznev, A.K. Gutakovskii, A.V. Chehovskii, V.V. Preobrazhenskii, M.A. Putyato, T.A. Gavrilova. Free-standing and overgrown InGaAs/GaAs nanotubes, nanohelices and their arrays. - Physica E, 2000, V. 6, No. 1-4, p. 828-831.
  7. A.B. Vorob`ev, V.Ya. Prinz, A.K. Gutakovskii, V.V. Preobrazhenskii, M.A. Putyato. Interface corrugation in (311)A GaAs/AlAs superlattices. Appl.Phys.Lett., 2000, V. 77, No. 19, pp. 2976-2978.
  8. L.S. Braginsky, M.Yu. Zaharov, A.M. Gilinsky, V.V. Preobrazhenskii, M.A. Putyato, and K.S. Zhuravlev Kinetics of exciton photoluminescence in type-II semiconductor superlattices. Phys. Rev. B 63, 195305 (2001).
  9. N.N. Ledentsov, D. Litvinov, A. Rosenauer, D. Gerthsen, I.P. Soshnikov, V.A. Shchukin, V.M. Ustinov, A.Yu. Egorov, A.E. Zhukov, V.A. Volodin, M.D. Efremov, V.V. Preobrazhenskii, B.R. Semyagin, D. Bimberg, Zh.I. Alferov Interface structure and growth mode of quantum wire and quantum dot GaAs-AlAs structures on corrugated (311)A surface. - Journal of Electronic Materials 30(5) (2001) pp. 463-470.
  10. V.V. Chaldyshev, N.A. Bert, Yu.G. Musikhin, A.A. Suvorova, V.V. Preobrazhenskii, M.A. Putyato, B.R. Semyagin, P. Werner and U. Gősele, Enhanced As–Sb intermixing of GaSb monolayer superlattices in low-temperature grown GaAs. Appl. Phys. Lett., 79, N. 9, 1294-1296 (2001).
  11. D. A. Vasyukov, M. V. Baidakova, V. V. Chaldyshev, A. A. Suvorova, V. V. Preobrazhenskii, M. A. Putyato, B.R. Semyagin, Structural transformations in low-temperature grown GaAs:Sb. J. Phys. D: Appl. Phys. 2001 V. 34, N. 10A, P. A15-A18.
  12. J. Herfort, V.V. Preobrazhenskii, N. Boukos, G. Apostolopoulos, and K.H. Ploog - Increased epitaxial thickness limit in low-temperature GaAs grown on a vicinal substrate. - Physica E, 2002,V.13, pp. 1190-1194.
  13. M. A. Putyato, V. V. Preobrazhenskii, B. R. Semyagin, Yu. B. Bolkhovityanov, A. M. Gilinsky, A. K. Gutakousky, M. A. Revenko, O. P. Pchelyakov and D. F. Feklin - InGaAsP/InGaP superlattices by conventional MBE with molten metal solution phosphorus source. – J. Cryst. Growth, V. 247, No. 1-2, January 2003, pp. 23-27.
  14. A.Vorob`ev, V. Prinz, V. Preobrazhenskii, B. Semyagin – Free-standing InAs/InGaAs microtubes and microspirals on InAs(100). – Jpn. J. Appl. Phys. V. 42. Part 2, No. 1A/B, 15 January 2003, pp. L1-L3.
  15. M. A. Putyato, V. V. Preobrazhenskii, B. R. Semyagin, Yu. B. Bolkhovityanov, A. M. Gilinsky, A. K. Gutakousky, M. A. Revenko, O. P. Pchelyakov and D. F. Feklin - InGaAsP/InGaP superlattices by conventional MBE with molten metal solution phosphorus source. – J. Cryst. Growth, V. 247, No. 1-2, January 2003, pp. 23-27.
  16. V.G. Mansurov, Yu.G. Galitsyn, V.V. Preobrazhenskii, and K.S. Zhuravlev, Growth kinetics of (0001)GaN from Ga and NH3 fluxes. – Phys. Stat. Sol., © 1, No. 2, 325-328 (2004).
  17. N.A. Cherkashin, A.Claverie, C.Bonafos, V.V. Chaldyshev, N.A. Bert, V.V. Preobrazhenskii, M.A. Putyato, B.R. Semyagin, P. Werner - Influence of the initial supersaturation of solute atoms on the size of nanoparticles grown by an Ostwald ripening mechanism. J. Appl. Phys. 102, 023520 (2007).
  18. A.G. Pogosov, M.V. Budantsev, R.A. Lavrov, V.G. Mansurov, A.Yu. Nikitin, V.V. Preobrazhenskii, K.S. Zhuravlev - Transport properties of the two-dimensional electron gas in GaN/AlGaN heterostructures grown by ammonia molecular-beam epitaxy.- Physica Status Solidi (a), V. 203, 2186-2189 (2006).
  19. T.S. Shamirzaev, N.S. Korzhavina, V.G. Mansurov, V.V. Preobrazhenskii, K.S. Zhuravlev - Prolonged kinetics of photoluminescence of two-dimensional electron gas in AlGaN/GaN heterostructure. - physica status solidi (c), V. 3, 2095-2098 (2006).
  20. M.V. Baidakova, N.A. Bert, V.V. Chaldyshev, V.N. Nevedomsky, M.A. Yagovkina, V.V. Preobrazhenskii, M.A. Putyato and B.R. Semyagin - Structural study of low-temperature grown superlattices of GaAs with delta-layers of Sb and P. - Physica B: Condensed Matter, Vol. 404, No. 23-24 (2009) 4970-4973.
  21. V.V. Chaldyshev, N.A. Bert, V.N. Nevedomsky, V.V. Preobrazhenskii, M. A. Putyato, and B.R. Semyagin, Self-organization of InAs and As quantum dots in GaAs by a combined molecular beam epitaxy process. – Phys. Status Solidi C6, No. 12(2009), 2698-2700.
  22. M.A. Putyato, V.V. Preobrazhenskii, B.R. Semyagin, D.F. Fёklin, N.A. Pakhanov, E.A. Emelianov, S.I. Chikiche - A valved cracking phosphorus beam source using InP thermal decomposition and its application to MBE growth. - Semicond. Sci. Technol. 24 (2009) 055014.
  23. N.N.Rubtsova, N.V.Kuleshov, V.E.Kisel', S.A.Kochubei, A.A.Kovalyov, S.V.Kurilchik, V.V.Preobrazhenskii, M.A.Putyato, O.P.Pchelyakov, T.S.Shamirzaev “Semiconductor nanostructures modified by UV laser radiation” Laser Physics, 2010, Vol. 20, No. 5, pp. 1262–1265.
  24. Nataliya N. Rubtsova, Sergey A. Kochubei, Alexander A. Kovalyov, Valery V. Preobrazhenskii, Mikhael A. Putyato, Oleg P. Pchelyakov, Boris R. Semyagin, Timur S. Shamirzaev, Nikolay V. Kuleshov, Viktor E. Kisel, and Sergey V. Kurilchik, “Saturable absorbers based on semiconductor A3B5 nanostructures”, Solid State Lasers and Amplifiers IV, and High-Power Lasers 12-April-2010 Brussels, Belgium. Proc. SPIE Vol. 7721, 77210G-77210G-11 (May. 19, 2010).
  25. M.A. Putyato, B.R. Semyagin, E.A. Emel’yanov, N.A. Pakhanov, and V.V. Preobrazhenskii, Molecular-beam epitaxy of GaAs/Si(001) structures for high-performance tandem AIIIBV/Si-solar energy converters on an active silicon substrate. - Russian Physics Journal, Vol. 53, No. 9, 2011, p. 906-913.
  26. A.A. Kovalyov, V.V. Preobrazhenskii, M.A. Putyato, O.P. Pchelyakov, N.N. Rubtsova, B.R. Semyagin, V.E. Kisel, S.V. Kuril’chik, and N.V. Kuleshov. 115 fs pulses from Yb3+:KY(WO4)2 laser with low loss nanostructured saturable absorber. – Laser Phys. Lett. 8, No.6, 431–435 (2011).
  27. A.A. Kovalyov, N.V. Kuleshov, V.E. Kisel', S.V. Kuril'chik, V.V. Preobrazhenskii, M.A. Putyato, O.P.Pchelyakov, N.N. Rubtsova, B.R. Semyagin, “Yb3+:KY(WO4)2 laser with fast saturable absorber”, Laser Physics, vol. 21, No. 7, pp. 1300–1304.
  28. D. S. Abramkin, M. A. Putyato, S. A. Budennyy, A. K. Gutakovskii, B. R. Semyagin, V. V. Preobrazhenskii, O. F. Kolomys, V. V. Strelchuk, T. S. Shamirzaev, Atomic structure and energy spectrum of Ga(As,P)/GaP heterostructures, J APPL PHYS, 2012, V. 112, No 8, p. 083713.
  29. M.V. Baidakova, N.A. Bert, V. V. Chaldyshev , and V.N. Nevedomsky, M. A. Yagovkina, V. V. Preobrazhenskii, M. A. Putyato, B.R. Semyagin. Structural transformations in the low-temperature grown GaAs with superlattices of Sb and P delta-layers. Acta Cryst. (2013). B69, 30-35.
  30. N. Cherkashin, S. Reboh, M.J. Hytch, A. Claverie, V.V. Preobrazhenskii, M.A. Putyato, B.R. Semyagin, and V.V. Chaldyshev Determination of stress, strain, and elemental distribution within In(Ga)As quantum dots embedded in GaAs using advanced transmission electron microscopy APPLIED PHYSICS LETTERS 102, 173115 (2013).
  31. В.Н. Неведомский, Н.А. Берт, В.В. Чалдышев, В.В. Преображенский, М.А. Путято, Б.Р. Семягин. Электронная микроскопия структур GaAs с квантовыми точками InAs и As, разделенными барьером AlAs. ФТП 2013, т.47, вып. 9, стр. 1196-1203.
  32. В.В.Ушанов, В.В.Чалдышев, В.В. Преображенский, М.А. Путято, Б.Р. Семягин. Отражение света от брэгговской решетки металлических нановключений AsSb в матрице AlGaAs. ФТП 2013 т.47, вып. 8, стр. 1043-1047.