Rzhanov Institute of Semiconductor Physics
Siberian Branch of Russian Academy of Sciences
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the e-site of our institute
The Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences (ISP SB RAS) was founded in 1964 based on the unification of the Institute of Solid Physics and Semiconductor Electronics SB USSR AS on USSR RAS Presiduim Resolution N 49, 24 April, 1964.

In 2003, on RAS Presidium Resolution N 224, 1.07.03, the Institute of Semiconductor Physics of of the Unified Institute of Semiconductor Physics SB RAS was reorganised into the Institute of Semiconductor Physics SB RAS by joining to it the Institute of Sensor Microelectronics SB RAS as an affiliated institution. ...

PRIME TRENDS AND SCOPE OF RESEARCH
  • physics of condensed media including semiconductor and insulator physics and physics of low-dimensional systems;
  • micro-, nanoelectronics, quantum computing, including physical-chemical bases of mnicro-, nano-, opto-, acoustoelectronic and microsensoric technologies;
  • modern problems of optics, laser physics including quantum electronics.
SEMICONDUCTORS MATERIAL AND COMPOUNDS
Bulk semiconductors: Si, GaAs, InAs
Quantum structures: Si/Ge, GaAlAs/InAlAs/GaAs, GaN, AlN, InN, InP, CdTe/ZnTe, CdHgTe/CdTe/GaAs, SOI
Heterostructures, multilayer structures: Ge/Si, AlAs/GaAs, GaAlAs/InAlAs/GaAs, GaN/GaAs, AlGaN/GaN
© ISP SB RAS, 2006-2014. Web-master: Sambur Nadezhda