Laboratory for Silicon Based Materials and Structures
Parameters of tested SOI CMOS integral circuits (IC) based on 90 nm partially depleated SOI CMOS field effect transistors (FET’s) were investigated both
theoretically and experimentally. Low values of threshold voltages (±0,6 V) were
obtained by thinning of nitrided gate oxide up to 5 nm and isotype doping of poly- crystalline gates lied over highly doped n- and
p-channels (~1018 сm-3) of transistors. As was
shown at extreme condition of testing at increased temperatures up to 250°C and totaldose irradidation up to 50 Mrad all invertors have the same transfer characteristics, as at
room temperature and all irradiated invertorsafter dose 10 Mrad also have trial characteristics as unirradiated ones keeping leakage
current below 2×10-8 А.
Low shifts in characteristics of SOI
Fig.1. AFM image of 90 nm silicon gates CMOS IC’s even at more higher temperatures
lying between gate and source of SOI FET. (300°C) and total doses (50 Mrad) open the
new horizons for creation of SOI very large
scale integration (VLSI) IC’s using our SOI wafers, which correspond to USA classification of IC’s as "strategic rad-hard IC’s" (SRH IC’s).
Technical and economical advantages
All technology is based on domestic technological equipment as well as on
FET devices and SOI structures, developed in ISP SB RAS. Russian analogs are
absent. All elements of IC’s are adapted not only to 90 nm but also to 1-2 mm
technological nodes, which are common for the Russian industrial microelectronics plants.
Fields of application
SOI CMOS IC’s are useable in extreme environment of high energy nuclear
physics, geophysics, nuclear plant production, aviation and cosmic unperturbed telecommunication and transport systems, which can also be experienced with high thermal loadings.
SOI IC’s elements are developed, that applicable as well as for design of
large and very large scale integration IC’s of SRH IC’s class and for commercial
IC’s in automatic and control for high temperature parameters of fuel motors and
power electric engines.
SOI production technology of ISP SB RAS is protected by 4 Russian patents
and PCT invents. SOI CMOS FET’s design is based on the row of "know-how"s,
which are not sent yet to the patent authorities.
A brand-new semiconductor nanosystems structuring technology based on deep local anode oxidation of Ti GaAs ans Si surfaces with the conducting atom-voltaic microscope probe using additional potential was elaborated. This technology allowed us to master a principally new size scale in nanostructures fabrication (10 - 100 nm). A quantum interferometer, efficient radius 90 nm, was developed and produced. So small sizes allowed us to increase the interferometer functional temperature a level higher (to 15 K).
Topographical (a) and phase (b) images of AlGaAs/GaAs with a section of locally oxidised probe of atom-voltaic microscope (quantum interferometer) (c) - profile of relief along the red span AB. (d) Aaron Bohm interferometer oscillations. Oscillation period B = 0.16 T is adequate to efficient radius r = 90 nm.
Institute of Semiconductor Physics , 13 Ac. Lavrentyev Ave., 630090, Novosibirsk, Russian Federation, tel.: +7(383)333-10-80, fax: +7(383)333-27-71, e-mail:
Laboratory of Nonlinear Resonant Processes and Laser Diagnostics
Information transmition from the transmitter (Alice) to the detector (Bob) over optical connection line with absolute secrecy.
1. Classical transmission line with a big number of photons is not protected from eavesdropping. 2. Classical cryptography is based on the absence of rapid factorisation algorithm for big numbers.
Information carrier - single polarized photon
Laws of quantum mechanics - each measurement changes a photon quantum state. Spy (Eva) eavesdropping is connected with measurement and further reproduction (cloning) of a photon state. However, precise photon cloning is impossible!
FOR ISP SB RAS QUANTUM CRYPTOGRAPHY
IPPN - 210 (PA "Sever")
Si avalanche photodiods
C30902S (EG&G, Canada)
Output impulse duration
Dark impulse frequency
Quantum channel - open interval
1 m long
Key generation velocity
1 kbit/sec at μ=0.1
1.8 kbit/sec at μ=0.2
Key errors amount
Number of laser impulses
Average photons number per impulse
Registered photons number
Binary actuation number
Length of obtained key
Key error percentage
106 Eva eavedrops!
Greetings to the participants of the third seminar devoted to the memory of D.N. Klyshko!
Greetings to the partivicipants of the third emi8nar devGot(ed to the memory of D.N. Klyshko!
Institute of Semiconductor Physics , 13 Ac. Lavrentyev Ave., 630090, Novosibirsk, Russian Federation, tel.: +7(383)333-24-08, e-mail: