ISP SB RAS
Rzhanov Institute of Semiconductor Physics
Siberian Branch of Russian Academy of Sciences
BASIC RESULTS
2013
A.V. Gaisler, A.S. Yaroshevich, I.A. Derebezov, A.K. Kalagin, A.K. Bakarov, A.I. Toropov, D.V. Shcheglov, V.A. Haisler, A.V. Latyshev, A.L. Aseev
Laboratory of Nanodiagnostics and Nanolithography.
Laboratory of Molecular Beam Epitaxy of A3B5 Semiconductor Compounds.
T.I. Baturina, A.K. Gutakovskii, A.V. Latyshev D. Kalok, Ante Bilušić, V.M. Vinokur, M.R. Baklanov, C. Strunk
Laboratory of Physics and Technology of A3B5 Semiconductor Structures
Laboratory of Nanodiagnostics and Nanolithography
Universität Regensburg, Germany
IMEC, Leuven, Belgium
Argonne National Laboratory, USA.
D.I. Rogilo, L.I. Fedina, S.S. Kosolobov, B. Ranguelov, A.V. Latyshev
Laboratory of Nanodiagnostics and Nanolithography.
A.I. Yakimov, V.V. Kirienko, V.A. Armbrister
Laboratory of Nonequilibrium Semiconductor Systems.
E.B. Olshanetsky, Z.D. Kvon, G.M. Gusev, N.N. Mikhailov, S.A. Dvoretsky
Laboratory of Physics and Technology of А3В5 Semiconductor Structures. Laboratory of Molecular Beam Eepitaxy of А2В6 Compounds. Departamento de FÍsicados Materiaise Mecânica, Instituto de FÍsicada Universidade de SãoPaulo, Brazil.
A.A. Shevyrin, A.G. Pogosov, M.V. Budantsev, A.K. Bakarov, A.I. Toropov
Laboratory of Non-equilibrium Semiconductor Systems. Laboratory of Molecular Beam Epitaxy of A3B5Surface photocurrent in a parabolic quantum well M.V. Entin and L.I. Magarill Semiconductor Compounds.
M.V. Entin and L.I. Magarill
Laboratory of Theoretical Physics.
A.A. Bykov, A.V. Goran, W. Mayer, S.A. Vitkalov
Laboratory of Physics and Technology of A3B5 Semiconductor Structures.
Physics Department, City College of the City University of New York, USA.
Z.D. Kvon, N.N. Mikhailov, S.A. Dvoretsky
Laboratory of Physics and Technology of А3В5 Semiconductor Structures.
Laboratory of Molecular Beam Epitaxy of А2В6 Compounds.
A.V. Nenashev, F. Jansson, J.O. Oelerich, D. Huemmer, A.V. Dvurechenskii, F. Gebhard, S.D. Baranovskii
Laboratory of Non-equilibrium Semiconductor Systems.
Department of Physics and Material Sciences Center, Philipps-University, Marburg, Germany.
A.G. Zhuravlev, M.L. Savchenko, A.G. Paulish, V.L. Alperovich
Laboratory of Non-equilibrium Processes in Semiconductors.
ISP Affiliated Office DTIAM.
V.P. Popov, M.A. Ilnitskii, L.N. Safronov, A.G. Paulish
Laboratory of Silicon Based Materials and Structures.
Design-and-Technology Institute of Applied Microelectronics (DTIAM).
T.V. Malin, V.G. Mansurov, A.M. Gilinsky, D.Yu. Protasov, A.S. Kozhukhov, A.P. Vasilenko, K.S. Zhuravlev
Laboratory of Molecular Beam Epitaxy of A3B5 Semiconductor Compounds.
V.G. Kesler, A.A. Guzev, A.P. Kovchavtsev, Z.V. Panova, A.V. Tsarenko
Laboratory of Physical Principles of Integral Microelectronics.
E.E. Rodyakina, P.A. Kuchinskaya
Laboratory of Nanodiagnostic and Nanolithography.
Laboratory of Non-equilibrium Semiconductor Systems.
S.A. Dvoretsky, N.N. Mikhailov, M.V. Yakushev, V.G. Remesnik, V.S. Varavin
Laboratory of Epitaxial Technology from Molecular Beams of A2B6 Compounds.
A.A. Shklyaev, D.V. Gulyaev, A.S. Kozhukhov, K.S. Zhuravlev, A.V. Latyshev, V.A. Armbrister, A.V. Dvurechenskii
Laboratory Nanodiagnostics and Nanolithography.
Laboratory of Nonequilibrium Semiconductor Systems.
Laboratory of Molecular Beam Epitaxy of A3B5 Compound Semiconductors.
Yu.B. Bolkhovityanov, A.S. Deryabin, A.K. Gutakovskii, L.V. Sokolov, A.P. Vasilenko
Laboratory of Molecular Beam Epitaxy of Elementary Semiconductors and A3B5 Compounds. Laboratory of Technology of Silicon Microelectronics.
A.K. Gutakovskii, V.A. Preobrazhensky
Laboratory of Nanodiagnostics and Nanolithography.
Laboratory of Molecular Beam Epitaxy of Elementary Semiconductors and Compounds A3B5.
A.I. Nikiforov, V.I. Mashanov, V.A. Timofeev, S.A. Teys, O.P. Pchelyakov
Laboratory of Molecular Beam Epitaxy of Elementary Semiconductors and A3B5 Compounds.
I.E. Tyschenko, V.A. Volodin, M. Voelskow, A.G. Cherkov, V.P. Popov
Laboratory of Silicon Material Science, Laboratory of Nanodiagnostocs and Nanolithography.
Scientific Centre Rossendorf, Fraunhofer Society, Dresden, Germany.
A.A. Shklyaev, K.N. Romanyuk, A.V. Latyshev
Laboratory Nanodiagnostics and Nanolithography.
Laboratory of Molecular Beam Epitaxy of Elementary and Compound Semiconductors.
N.A. Nebogatikova, I.V. Antonova, V.Ya. Prinz
Laboratory of Physics and Technology of 3D Structures.
A.G. Milekhin, N.A. Yeryukov, L.L. Sveshnikova, T.A. Duda
Laboratory of Physical Chemistry of Semiconductor Surface and Semiconductor-dielectric Systems.
A.N. Akimov, A.E. Klimov, N.S. Pashchin, S.P. Suprun, E.V. Fedosenko, V.N. Shumsky
Laboratory of Physics and Technology of Heterostructures.
Laboratory of Nanodiagnostics and Nanolithography
D.B. Tretyakov, I.I. Beterov, V.M. Entin, I.I. Ryabtsev
Laboratory of Nonlinear Resonant Processes and Laser Diagnostics.
I.I. Beterov, E.A. Yakshina, D.B. Tretyakov, V.M. Entin, I.I. Ryabtsev, M. Saffman, V.P. Zhukov, C.W. Mansell, C. MacCormick, S. Bergamini, M.P. Fedoruk
Laboratory of Nonlinear Resonant Processes and Laser Diagnostics.
V.L. Kurochkin, Yu.V. Kurochkin, I.I. Ryabtsev, A.V. Zverev, I.G. Neizvestny
Laboratory of Nonlinear Resonant Processes and Laser Diagnostics.
Laboratory of Molecular-beam Epitaxy Technology of A2B6 Junctions.
Group of Modeling Electronic and Technological Processes of Microelectronics.
P.A. Bokhan, P.P. Gugin, Dm.E. Zakrevsky and M.A. Lavrukhin
Laboratory of Power Gas Lasers.
N.N. Rubtsova, V.G. Gol'dort, V.N. Ishchenko, E.B. Khvorostov, S.A. Kochubei, V.A. Reshetov, I.V. Yevseyev
Laboratory for Laser Spectroscopy and Laser Technologies.
A.V. Tsarev
Laboratory of Optical Materials and Structures.
A.G. Nastovjak, N.L. Shwartz
Group for Simulation of Electron and Technological Processes of Microelectronics.
A.Y. Polyakov, A.V. Nenashev, S.A. Rudin
Computer Systems Laboratory.
Laboratory of Nonequilibrium Semiconductor Systems.