ISP SB RAS
Rzhanov Institute of Semiconductor Physics
Siberian Branch of Russian Academy of Sciences
INSTITUTE DIVISIONS

SCIENTIFIC DEPARTMENTS

  • Department of Growth and Structure of Semiconductor Materials
    Head of the Department: O.P.Pchelyakov, Professor, Doctor of phys.-math. sci.
    The Department involves:
  • Department of Physics and Technology of Low-Dimensional Semiconductors, Micro - and Nanostructures
    Head of the Department: A.L.Aseev, Academician of RAS
    The Department involves:
    • Laboratory of Nanodiagnostics and Nanolithography
      headed by A.V. Latyshev, Academician of RAS;
    • Laboratory of Physics and Technology of A3B5 Semiconductor Structures
      headed by Z.D. Kvon, Professor, Doctor of phys.-math. sci.
  • Department of Thin-Film Structures for Micro- and Photoelectronics
    headed by I.G. Neizvestny, Professor, Corresponding member of RAS.
    The Department involves:
    • Laboratory of Physics and Technology of Heterostructures.
      headed by A.E. Klimov, Doctor of phys.-math. sci.;
    • Team for Simulation of Electron and Technological Processes of Microelectronics
      headed by N.L. Schwartz, PhD in phys.-math. sci.
  • Department of Physics and Engineering of Semiconductor Structures
    headed by V.N. Ovsyuk, Professor, Doctor of phys.-math. sci.
    The Department involves:
    • Laboratory of Kinetic Phenomena in Semiconductors
      Acting Head D.G. Esaev, PhD in phys.-math. sci.
    • Laboratory of Molecular Beam Epitaxy of A3B5 Semiconductor Compounds
      headed by A.I. Toropov, PhD in phys.-math. sci.
  • Department of Infra-Red MCT-Based Optoelectronics
    headed by Yu.G. Sidorov, Doctor of phys.-math. sci.
    The Department involves:
    • Laboratory of Epitaxial Technology from Molecular Beams of A2B6 compounds
      Acting Head S.A.Dvoretsky, PhD in phys.-math. sci.
    • Laboratory for Physical-Technological Principles of Making A2B6-based devices
      headed by V.V. Vasilyev, PhD in phys.-math. sci.

SCIENTIFIC LABORATORIES

  • Laboratory of Theoretical Physics
    headed by A.V.Chaplik, Professor, Corresponding member of RAS.
  • Computer Systems Laboratory
    Acting Head K.V.Pavsky, PhD in tech. sci.
  • Laboratory of Physical Chemistry of Semiconductor Surface and Semiconductor - Dielectric Systems
    headed by O.I. Semenova, PhD in chem. sci.
  • Laboratory of Optic Materials and Structures,
    headed by V.V. Atuchin, PhD in phys.-math. sci.
  • Laboratory of Physics and Technology of Three-Dimensional Nanostructures
    headed by V.Ya.Prinz, Professor, Doctor of phys.-math. sci.
  • Laboratory of Nonequilibrium Processes in Semiconductors
    headed by A.S. Terekhov, Professor, Doctor of phys.-math. sci.
  • Laboratory of Silicon Material Science.
    headed by V.P. Popov, Doctor of phys.-math. sci.
  • Laboratory of Physical Principles for Integrated Microelectronics.
    Acting Head A.P. Kovchavtsev, Doctor of phys.-math. sci.
  • Laboratory of Technology of Silicon Microelectronics
    acting head L.K. Popov, PhD in phys.-math. sci.
  • Laboratory of Nonequilibrium Semiconductor Systems
    headed by A.V. Dvurechenskii, Professor, Doctor of phys.-math. sci., Corresponding member of RAS.
  • Laboratory of Laser Spectroscopy and Laser Technologies.
    headed by N.N. Rubtsova, Doctor of phys.-math. sci.
  • Laboratory of Nonlinear Resonant Processes and Laser Diagnostics.
    headed by I.I. Ryabtsev, Corresponding member of RAS, Doctor of phys.-math. sci.
  • Laboratory of Power Gas Lasers.
    headed by D.E. Zakrevsky, Candidate of phys.-math. sci.

DESIGN-AND-TECHNOLOGY INSTITUTE OF APPLIED MICROELECTRONICS (DTIAM),
ISP AFFILIATED OFFICE, NOVOSIBIRSK

  • Scientific-Research Department for Photo-Chemical Technologies.
    Head of the Department, A.V.Gelfand
  • Scientific-Research Department for Thermal Imaging and Television.
    Head of the Department, K.P.Shatunov.
  • Subject Department for Engineering of Optoelectronic Devices.
    Head of the Department, V.V.Buzuk.
  • Subject Department for Electronic Systems.
    Head of the Department, A.V.Gusachenko.
  • Subject Department for Modeling of Optoelectronic Devices.
    Head of the Department, A.V.Golitsyn.
  • Subject Department of Applied Optoelectronic Technology.
    Head of the Department, Yu.F. Odnolko.
  • Subject Department for Specialized Technological Facilities.
    Head of the Department, G.A.Potemkin