Igor G. Neizvestny Corresponding Member of RAS
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I.G. Neizvestny was born 26.11.1931 in Odessa. 1956 - graduated from the Elecromechanical Faculty of the Moscow Energy Institute on the speciality "Insulators and Semiconductors", then he was absorbed in scientific activities at the Physical Institute USSR AS (engineer-researcher) for the period 1956 - 1962. 1962 - was appointed Deputy Director of the Institute of Solids Physics and Semiconductor Electronics SB RAS, Novosibirsk (since 1964 - ISP SBRAS). 1964 - defended his PhD thesis in "Studying the origin of recombination centres of charge carriers on germanium surface; 1980 - Doctoral thesis "Studying germanium-insulator interface borders". 1983 - became professor. 1990 - was elected Corresponding member of USSR AS on the department of informatics, computing devices and automation (speciality - "Element base of computing devices").