HEAD OF LABORATORY

Anatoly V. Dvurechenskii

RAS Corresponding member,
Doc. phys.-math. sci., Professor,
Laureate of the USSR State Premium,
ISP SB RAS Deputy Director,
Head of Lab. 24.
Tel.: +7(383)333-24-66
E-mail: This email address is being protected from spambots. You need JavaScript enabled to view it.

Main area of scientific work:

The main research interests are in the area of atomic and electronic structure of point defects induced by fast electrons, neutrons and ion beam irradiation; ion-beam assisted phase transition, crystal nucleation and growth; laser annealing, melting, solidification; electronic and optical phenomena in disordered system and low dimensional structures. Current research topics in his laboratory is quantum dot heterostructures: nanocrystal nucleation and growth with pulsed ion beam action during molecular beam epitaxy, pulsed laser annealing, electron transport and optical phenomena in quantum dot heterostructures, nanoelectronics and nanophotonics, nanodevices. As a guest scientist he worked in New York State University at Albany (1979), in Research Center Rossendorf, Dresden, Germany (since 1980 practically every year), Fudan University, Shanghai, China (2001, 2002, and 2006). The scientific results published in more than 280 publications.

Educational Record:

  • 1963 -1968 Novosibirsk State University, Physics Department.

  • 1968 - 1970 Post graduate course in Institute of Semiconductor Physics, Novosibirsk.

  • 1974 He received his PhD degree in Physics and Mathematics from the Institute of Semiconductor Physics (Candidate of Phys. Mathematical Science), Novosibirsk.

  • 1988 He received his Doctor of Physics and Mathematics degree from the same Institute.

  • 1993 Professor of Physics.

  • 2008 - was elected RAS Corresponding member in RAS department of nano- and information technologies on the speciality "Nanoelectronics".

Career Record:

  • 1970 - 1981 Junior researcher in Institute of Semiconductor Physics, Siberian branch, Russian academy of sciences, Novosibirsk.

  • 1981 - 1986 Senior researcher in Institute of Semiconductor Physics, Novosibirsk.

  • 1986 - 1987 Leading researcher in Institute of Semiconductor Physics, Novosibirsk.

  • 1987 - 2002 Head of laboratory of Non-equilibrium semiconductor systems in Institute of Semiconductor Physics, Novosibirsk.

  • 1987 - present Professor of Novosibirsk State University, to lecture on: Radiation Physics of Semiconductors and Physics of Nanotechnology.

  • 2002 - present Deputy Director of Institute of Semiconductor Physics Siberian Branch of Russian Academy of Science. Head of laboratory of Non-equilibrium semiconductor systems.

Awards:

  • He received the highest award of the Soviet Union in Science, State Prize in 1988 on the results on physical phenomena at pulsed laser annealing of thin semiconductors layers, and International prize of academies of science of Soviet Union and German Democratic Republic.

Member of scientific boards:

In 2008 he was elected as corresponding member of Russian Academy of Science. He is member of scientific boards on the problems of Physics of Semiconductors, Radiation Physics of Solid State and Physical&Chemistry Fundamentals in Semiconductor Materials in Russian Academy of Science.

Some Recent Publications:

  1. A.I. Yakimov and A.V. Dvurechenskii. Germanium self-assembled quantum dots for mid-infrared photodetectors. In: International Journal of High Speed Electronics and Systems, 2003, v.12, No.3, 873-889.

  2. A.I.Yakimov, A.V.Dvurechenskii, A.I.Nikiforov, V.V.Ulyanov, A.G.Milekhin, A.O.Govorov, S.Schulze, and D.R.T. Zahn. Stark effect in type-II Ge/Si quantum dots. In: Phys. Rev. B, 2003, v.67, No.12, 125318.

  3. A.I. Yakimov and A.V. Dvurechenskii. Germanium self-assembled quantum dots for mid-infrared photodetectors. In: Intersubband Infrared Photodetectors, ed. by V. Ryzhii, Selected Topics in Electronics and Systems, 2003, v. 27, World Scientific, Singapore, 281-298.

  4. A.V. Dvurechenskii and A.I. Yakimov. Optical properties of arrays of Ge/Si quantum dots in electric fields. In: Towards the First Silicon Laser, ed. by L. Paversi et al., Kluwer Academic Publishers, Netherland, 2003, 307-314.

  5. A.I. Yakimov, A.V. Dvurechenskii, A.I. Nikiforov, S.V. Chaikovskii, and S.A. Tyes. Ge/Si photodiodes with embedded arrays of Ge quantum dots for the near infrared region. In: Semiconductors, 2003, v.37, No.11, 1345-1349.

  6. A.V. Dvurechenskii, A.I. Yakimov, A.V. Nenashev, A.F. Zinovyeva. Ge/Si Quantum Dots in External Electric and Magnetic Fields. In: Physics of the Solid State, 2004, v.46, No.1, 56-59.

  7. A.I. Yakimov, A.V. Dvurechenskii, V.V. Kirienko, N.P. Stepina, A.I. Nikiforov, V.V. Ulyanov, S.V. Chaikovskii, V.A. Volodin, M.D. Efremov, M.S. Seksenbaev, T.S. Shamirzaev, K.S. Zhuravlev. Ge/Si waveguide photodiodes with built-in layers of Ge quantum dots for fiber-optic communication lines. In: Semiconductors, 2004, v.38, No.10, 1225-1229.

  8. V.A. Volodin, M.D. Efremov, D.A. Orekhov, A.I. Nikiforov, O.P. Pchelyakov, V.V. Ulyanov, A.I. Yakimov, A.V. Dvurechenskii. Ge dots on Si (111) and (100) surfaces with SiO2 coverage: Raman study. Physica E, 2004, v.23, No.3-4, 320-323.

  9. N.P. Stepina, A.I. Yakimov, A.V. Dvurechenskii, A.V. Nenashev, and A.I. Nikiforov, Non-Equilibrium Transport in Arrays of Type-II Ge/Si Quantum Dots, Phys. Stat. Sol. (c) 2004, v.1, No.1, pp.21-24.

  10. A.V. Dvurechenskii, J.V. Smagina, V.A. Zinovyev, S.A. Teys, A.K. Gutakovskii. Modification of growth mode of Ge on Si by pulsed low-energy ion-beam irradiation. International Journal of Nanoscience 2004, v.3, No.1&2, p.19-27.

  11. A.F.Zinovieva, A.V.Nenashev, A.V.Dvurechenskii, Hole spin relaxation during tunneling between coupled quantum dots, Phys. Rev. B, 2005, v.71, 033310.

  12. N.P. Stepina, A.I. Yakimov, A.V. Nenashev, A.V. Dvurechenskii, A.V. Peregoedov, A.I. Nikiforov. Hopping photoconductivity and its long-time relaxation in two-dimensional array of Ge/Si quantum dots. In: Phys. Stat. Sol. (c), 2005, v.2, No.8, 3118-3121.

  13. A.I. Yakimov, A.V. Dvurechenskii, V.A. Volodin, M.D. Efremov, A.I. Nikiforov, G.Yu. Mikhalyov, E.I. Gatskevich, G.D. Ivlev. Effect of pulsed laser action on hole energy spectrum of Ge/Si self-assembled quantum dots. In: Phys. Rev. B, 2005, v.72, No.11, 115318.

  14. A. V. Dvurechenskii, J.V. Smagina, R.Groetzschel, V.A. Zinoviev, V.A. Armbrister, P.L. Novikov, S.A. Teys, A.K. Gutakovskii. Ge/Si quantum dot nanostructures grown with low-energy ion beam-epitaxy. Surface & Coating Technology, 2005, v.196, No.В 1-3, 25-29.

  15. A.I. Yakimov, A.V. Dvurechenskii, V.A. Volodin, M.D. Efremov, A.I. Nikiforov, G.Yu. Mikhalyov, E.I. Gatskevich, G.D. Ivlev. Effect of pulsed laser action on hole energy spectrum of Ge/Si self-assembled quantum dots. In: Phys. Rev. B, 2005, v.72, No.11, 115318.

  16. A. I. Yakimov, A. V. Dvurechenskii, A. I. Nikiforov, A. A. Bloshkin, A. V. Nenashev, V.В A.В Volodin. Electronic states in Ge/Si quantum dots with type-II band alignment initiated by space-charge spectroscopy // Phys. Rev. B, 2006, v. 73, 115333.

  17. A.I. Yakimov, A.V. Dvurechenskii, A.I. Nikiforov. Germanium Self-Assembled Quantum Dots in Silicon: Growth, Electronic Transport, Optical Phenomena, and Devices (Review). In: Handbook of Semiconductor Nanostructures and Nanodevices, Volume 1, edited by A.A. Balandin and K.L. Wang (American Scientific Publishers, NY), p. 33-102, 2006.

  18. A.I. Yakimov, A.I. Nikiforov, A.V. Dvurechenskii, V.V. Ulyanov, V.A. Volodin, and R. Groetzschel. Effect of growth rate on the morphology and structural properties of hut-shaped Ge islands in Si(001). In: Nanotechnology, 2006, v.17, No.18, 4743-4747.

  19. A.I. Yakimov, A.I. Nikiforov, and A.V. Dvurechenskii. Localization of electrons in multiple layers of self-assembled Ge/Si islands. In: Applied Physics Letters, 2006, v.89, No.15, 153116.

  20. A.I. Yakimov, A.V. Dvurechenskii, and A.I. Nikiforov. Germanium Self-Assembled Quantum Dots in Silicon for Nano- and Optoelectronics (Review). In: Journal of Nanoelectronics and Optoelectronics. 2006, v.1, No.2, 119-175.

  21. A.V. Dvurechenskii, A.I. Yakimov, N.P. Stepina, V.V. Kirienko, P.L. Novikov. SiGe nanodots in electro-optical SOI devices. - In: Nanoscaled Semiconductor-on-Insulator Structures and devices, ed. S. Hall, Springer, 2007, p. 113-128.

  22. A.I. Yakimov, A.A. Bloshkin, and A.V. Dvurechenskii. Enhanced oscillator strength of interband transitions in coupled Ge/Si quantum dots. In: Applied Physics Letters, 2008, v. 93, No.13, p. 132105.

  23. A.F. Zinoveva, A.V. Dvurechenskii, N.P. Stepina, A.S. Deryabin, A.I. Nikiforov. R. Rubinger, N.A. Sobolev, J.P. LeitРіo, M.C. Carmo. Spin resonance of electrons localized on Ge/Si quantum dots. - Phys. Rev. B, 2008, v. 77, p. 115319.

  24. A.I. Yakimov, A.A. Bloshkin, and A.V. Dvurechenskii. Asymmetry of single-particle hole states in a strained Ge/Si diuble quantum dots. In: Phys. Rev. B, 2008, v. 78, No.16, p. 165310.

  25. A. V. Nenashev, F. Jansson, S. D. Baranovskii, R. Osterbacka, A. V. Dvurechenskii and F.В Gebhard. Hopping conduction in strong electric fields: Negative differential conductivity. Phys. Rev. B, 2008, v. 78, No. 16, 165207.

  26. A.I. Yakimov, G.Yu. Mikhalyov, A.V. Dvurechenskii. Molecular ground hole state of vertically coupled GeSi/Si self-assembled quantum dots. In: Nanotechnology, 2008, v. 19, p. 055202.

  27. A.I. Yakimov, A.A. Bloshkin, and A.V. Dvurechenskii. Enhanced oscillator strength of interband transitions in coupled Ge/Si quantum dots. In: Applied Physics Letters, 2008, v. 93, No.13, p. 132105.

  28. A.I. Yakimov, A.A. Bloshkin, and A.V. Dvurechenskii. Asymmetry of single-particle hole states in a strained Ge/Si double quantum dots. In: Phys. Rev. B, 2008, v. 78, No.16, p. 165310.

  29. A.F. Zinoveva, A.V. Dvurechenskii, N.P. Stepina, A.S. Deryabin, A.I. Nikiforov. R. Rubinger, N.A. Sobolev, J.P. LeitГЈo, M.C. Carmo. Spin resonance of electrons localized on Ge/Si quantum dots. - Phys. Rev. B, 2008, v. 77, p. 115319.